A novel mechanism for parallel conduction in GaAs-(Ga,Al)As heterojunctions
نویسندگان
چکیده
منابع مشابه
Mott transition of excitons in GaAs-GaAlAs quantum wells
We investigate the breakup of bound electron–hole pairs, known as Mott transition of excitons, in GaAs-GaAlAs quantum wells with increasing excitation, comparing two different theoretical approaches. Firstly, a thermodynamic approach is used to investigate the ionization equilibrium between electrons, holes and excitons, where the abrupt jump of the degree of ionization from 0 to 1 indicates th...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1992
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/7/7/014